ghz technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 / 986-8120 1014 - 2 2 watt - 28 volts, class c microwave 1000 - 1400 mhz general description case outline the 1014-2 is a common base transistor capable of providing 2 watts of class c, rf output power over the band 1000-1400 mhz. this transistor is designed for microwave broadband class c amplifier applications. it includes input prematching and utilizes gold metalization and diffused ballasting to provide high reliagility and supreme ruggedness. 55lt, style 1 absolute maximum ratings maximum power dissipation @ 25 c 9.7 watts o maximum voltage and current bvces collector to emitter voltage 50 volts bvebo emitter to base voltage 3.5 volts ic collector current 0.5 a maximum temperatures storage temperature - 65 to +150 c o operating junction temperature +200 c o electrical characteristics @ 25 c o symbol characteristics test conditions min typ max units pout pin power input vcb = 28 volts pg h c vswr 1 power out f =1000-1400 mhz power gain collector efficiency as above load mismatch tolerance pout = 2 watts 2 watt 7.5 db 45 % 0.35 watt 10:1 bvces bvebo icbo h fe cob q jc collector to emitter breakdown ic = 20 ma 50 volts emitter to base breakdown ie = 5 ma 3.5 volts collector to base current vcb = 28 volts 0.5 ma current gain 10 100 output capacitance 4.5 pf thermal resistance 18 c/w vce = 28 v, ic = 100 ma vcb = 25 v, f = 1 mhz tc = 25 c o o rev a, feb 1997 ghz technology, inc. reserves the right to make changes without further notice. ghz recommends that before the product(s) described herein are written into specifications, or used in critical applications, that the performance characteristics be verified by contacting the factory.
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